Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions
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! | ! Sputtering deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]) | ! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]) | ||
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Revision as of 11:32, 30 January 2017
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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.
| Sputtering deposition (Lesker) | Atomic layer deposition (ALD Picosun R200) | |
|---|---|---|
| General description | Sputter deposition of AZO | Atomic layer deposition of AZO |
| Pre-clean | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 1µm* | 10Å to |
| Deposition rate | 2Å/s to 15Å/s | ~0.3Å/s |
| Batch size |
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| Allowed materials |
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| Comment |
* For thicknesses above 200 nm permission is required.