Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before. | The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before. | ||
==Calculation for wet oxidation== | ==Calculation for wet oxidation== | ||