Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
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|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]] | |style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]] | ||
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] | |style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] | ||
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]] | |||
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]] | <!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]] | ||
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|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP | |style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP | ||
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP | |style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP | ||
|style="background:WhiteSmoke; color:black" align="center"| SEM Tabletop 1 | |||
<!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D--> | <!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D--> | ||
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* Thin (~ 5 µm <) layers of non-conducting materials such as polymers | * Thin (~ 5 µm <) layers of non-conducting materials such as polymers | ||
* Thick polymers, glass or quartz samples | * Thick polymers, glass or quartz samples | ||
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* Conductive samples--> | * Conductive samples--> | ||
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* Surface material analysis using EDX | * Surface material analysis using EDX | ||
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!style="background:silver; color:black;" align="center" width="60"|Instrument Position | !style="background:silver; color:black;" align="center" width="60"|Instrument Position | ||
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*Cleanroom of DTU Danchip | *Cleanroom of DTU Danchip | ||
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*DTU CEN--> | *DTU CEN--> | ||
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* ~3.5 nm (limited by instrument)--> | * ~3.5 nm (limited by instrument)--> | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics | !style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics | ||
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* Large Field Detector (LFD) - Add-on | * Large Field Detector (LFD) - Add-on | ||
* CCD camera --> | * CCD camera --> | ||
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|style="background:LightGrey; color:black" align="center" |Stage | |style="background:LightGrey; color:black" align="center" |Stage | ||
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* T: 0 to 60<sup>o</sup> | * T: 0 to 60<sup>o</sup> | ||
* R: 360<sup>o</sup>--> | * R: 360<sup>o</sup>--> | ||
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|style="background:LightGrey; color:black" align="center" |Electron source | |style="background:LightGrey; color:black" align="center" |Electron source | ||
|style="background:Whitesmoke; color:black" colspan=" | |style="background:Whitesmoke; color:black" colspan="4" align="center"| FEG (Field Emission Gun) source | ||
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* Tungsten filament | |||
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* Tungsten filament--> | * Tungsten filament--> | ||
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* Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | * Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | ||
* Variable at Low vacuum (0.1 mbar-2 mbar) | * Variable at Low vacuum (0.1 mbar-2 mbar) | ||
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* High vacuum and Low vacuum--> | * High vacuum and Low vacuum--> | ||
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*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) | *High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) | ||
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* Focused ion beam (FIB) (Ga<sup>+</sup> ions)--> | * Focused ion beam (FIB) (Ga<sup>+</sup> ions)--> | ||
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* Up to 6" wafer with full view | * Up to 6" wafer with full view | ||
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* Wafers won´t fit without a proper holder. The height of the sample is critical, should be as small, as possible--> | * Wafers won´t fit without a proper holder. The height of the sample is critical, should be as small, as possible--> | ||
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* Any standard cleanroom materials | * Any standard cleanroom materials | ||
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* Conductive materials | * Conductive materials | ||