Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions
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|Al2O3 | |Al2O3 | ||
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*'''~ | *'''~93nm/min (30s, 1/4 wafer on 6" carrier)'''<br> ''2017-01-20 bghe@danchip'' | ||
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Revision as of 14:08, 20 January 2017
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| Parameter | Recipe name: no name yet (testing recipe) |
|---|---|
| Coil Power [W] | 1200 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 0 |
| BCl3 flow [sccm] | 60 |
| Cl2 flow [sccm] | 30 |
| Pressure [mTorr] | 4 |
Etch rates in different materials using the standard "Silicon oxide etch with resist mask"
| Material to be etched | Etch rate using the above parameters |
|---|---|
| Al2O3 |
|