|
|
| Line 7: |
Line 7: |
| |-style="background:Black; color:White" | | |-style="background:Black; color:White" |
| ! Parameter | | ! Parameter |
| |Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask) | | |Recipe name: '''no name yet''' (testing recipe) |
| |- | | |- |
| |Coil Power [W] | | |Coil Power [W] |
| |1300 | | |1200 |
| |- | | |- |
| |Platen Power [W] | | |Platen Power [W] |
| Line 18: |
Line 18: |
| |0 | | |0 |
| |- | | |- |
| |He flow [sccm] | | |BCl3 flow [sccm] |
| |174 | | |60 |
| |- | | |- |
| |C<sub>4</sub>F<sub>8</sub> flow [sccm] | | |Cl<sub>2</sub> flow [sccm] |
| |5
| | |30 |
| |-
| |
| |H<sub>2</sub> flow [sccm]
| |
| |4 | |
| |- | | |- |
| |Pressure [mTorr] | | |Pressure [mTorr] |
| Line 38: |
Line 35: |
| |-style="background:DarkGray; color:White" | | |-style="background:DarkGray; color:White" |
| !Material to be etched | | !Material to be etched |
| !Etch rate using SiO2_res | | !Etch rate using the above parameters |
| |- | | |- |
| |Thermal oxide | | |Al2O3 |
| | | | | |
| *'''~230nm/min (5% etch load)''' - etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']] | | *'''~230nm/min (1/4 wafer on 6" carrier)''' |
| *200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |- | | |- |
| |TEOS oxide (5% load)
| |
| |'''233nm/min ±0.7%''' - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
| |
| |-
| |
| |PECVD1 (standard) oxide (5% load)
| |
| |'''242nm/min ±0.6%''' - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
| |
| |-
| |
| |Al2O3 from the ALD
| |
|
| |
|
| |
| |
| *34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| *50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
| |
| |-
| |
| |Silicon rich nitride from furnace B2
| |
| |136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
| |
| |-
| |
| |Cr
| |
| |6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |-
| |
| |Al
| |
| |18nm/min (1:11 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |-
| |
| |} | | |} |
|
| |
|
| <br clear="all" /> | | <br clear="all" /> |
