Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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|-style="background:Black; color:White"
|-style="background:Black; color:White"
! Parameter
! Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask)   
|Recipe name: '''no name yet''' (testing recipe)   
|-
|-
|Coil Power [W]
|Coil Power [W]
|1300
|1200
|-
|-
|Platen Power [W]
|Platen Power [W]
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|0
|0
|-
|-
|He flow [sccm]
|BCl3 flow [sccm]
|174
|60
|-
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|Cl<sub>2</sub> flow [sccm]
|5
|30
|-
|H<sub>2</sub> flow [sccm]
|4
|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
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|-style="background:DarkGray; color:White"
|-style="background:DarkGray; color:White"
!Material to be etched
!Material to be etched
!Etch rate using SiO2_res
!Etch rate using the above parameters
|-
|-
|Thermal oxide
|Al2O3
|
|
*'''~230nm/min (5% etch load)''' -  etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
*'''~230nm/min (1/4 wafer on 6" carrier)'''
*200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|-
|TEOS oxide (5% load)
|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
|-
|PECVD1 (standard) oxide (5% load)
|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
|-
|Al2O3 from the ALD


|
*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
|-
|Silicon rich nitride from furnace B2
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
|-
|Cr
|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|Al
|18nm/min (1:11 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|}
|}


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Revision as of 15:04, 20 January 2017

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Parameter Recipe name: no name yet (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Etch rates in different materials using the standard "Silicon oxide etch with resist mask"

Material to be etched Etch rate using the above parameters
Al2O3
  • ~230nm/min (1/4 wafer on 6" carrier)


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