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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
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!Parameter
!Parameter
!Recipe on ICP metal: A SiO2 etch with C4F8 with resist mask
!Recipe on ICP metal: A SiO2 etch with C4F8 with resist mask
!Recipe on ICP metal: A SiO2 etch with C4F8 with resist mask@20dgC
|-
|-
|Coil Power [W]
|Coil Power [W]
|1000
|1000
|1000
|-
|-
|Platen Power [W]
|Platen Power [W]
|200
|200
|200
|-
|-
|Platen temperature [<sup>o</sup>C]
|Platen temperature [<sup>o</sup>C]
|0
|0
|20
|-
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|10
|10
|10
|-
|-
|H<sub>2</sub> flow [sccm]
|H<sub>2</sub> flow [sccm]
|28
|28
|28
|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|2.5
|2.5
|2.5
|-
|-
Line 125: Line 118:
|-style="background:Black; color:White"
|-style="background:Black; color:White"
!Results
!Results
!Test  
!Test
!Test@20dgC
|-
|-
|Etch rate of thermal oxide
|Etch rate of thermal oxide
|'''145-172 nm/min''' ''by bghe@danchip (2015-06-02)''
|
|'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)''
*'''145-172 nm/min''' ''by bghe@danchip (2015-06-02)''
*'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)''
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
| 4-5:1 (SiO2:resist)
| 4-5:1 (SiO2:resist) ''by bghe@danchip (2015-06-02)''
|
|-
|-
|Cr etch rate
|Cr etch rate
|not tested
|1.6 nm/min (1:90 to SiO2) ''by Martin Lind Ommen (fall 2016)''
|1.6 nm/min (1:90 to SiO2) ''by Martin Lind Ommen (fall 2016)''
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|86-87 dg
|86-87 dg ''by bghe@danchip (2015-06-02)''
|
|-
|-
|Wafer uniformity map (click on the image to view a larger image)
|Wafer uniformity map (click on the image to view a larger image)
|
|
|
|-
|-
|SEM profile images
|SEM profile images
|[[File:ICP metal s007592_21.jpg|200px]] [[File:ICP metal s007592_24.jpg|200px]]
|[[File:ICP metal s007592_21.jpg|200px]] [[File:ICP metal s007592_24.jpg|200px]]<br> ''by bghe@danchip (2015-06-02)''
|
|
|-
|-
|Etch rate in barc
|Etch rate in barc
|
|
|
|-
|-
|Etch rate in KRF resist
|Etch rate in KRF resist
|34 nm/min
|34 nm/min ''by bghe@danchip (2015-06-02)''
|
|-
|-
|Comments
|Comments
|Sample: s007592
|
|See Martin Lind Ommen's results with hard masks in Process2share: [http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_SiO2] <br> There were problems with polymer on the surface after etching.
*Sample: s007592 ''by bghe@danchip (2015-06-02)''
*See Martin Lind Ommen's results with hard masks in Process2share: [http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_SiO2] <br> There were problems with polymer on the surface after etching.
|}
|}


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