Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions

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|'''Recipe'''
|'''Recipe'''
|'''GaN Etch'''
|'''GaN Etch'''
|'''GaN Etch for Si check'''
|-  
|-  
|Cl<sub>2</sub> flow
|Cl<sub>2</sub> flow
|30 sccm
|30 sccm
|27 sccm
|-
|-
|Ar flow
|Ar flow
|10 sccm
|10 sccm
|3 sccm
|-
|BCl3 flow
|0 sccm
|3 sccm
|-
|-
|Platen power
|Platen power
|200 W
|200 W
|75 W
|-
|-
|Coil power
|Coil power
|600 W
|600 W
|400 W
|-  
|-  
|Pressure
|Pressure
|2 mTorr
|2 mTorr
|4 mTorr
|-
|-
|Platen chiller  temperature
|Platen chiller  temperature
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|-

Revision as of 15:46, 17 January 2017

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GaN etching

Recipe GaN Etch GaN Etch for Si check
Cl2 flow 30 sccm 27 sccm
Ar flow 10 sccm 3 sccm
BCl3 flow 0 sccm 3 sccm
Platen power 200 W 75 W
Coil power 600 W 400 W
Pressure 2 mTorr 4 mTorr
Platen chiller temperature 20 oC 20 oC


Results (GaN Etch)
GaN etch rate 550-580 nm/min
SiO2 etch rate 110-120 nm/min
Sidewall angle ~ 90 o
Result of GaN etching. Oleksii Kopylov, DTU Photonics, 2011.
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