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Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions

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|'''Recipe'''
|'''Recipe'''
|'''GaN Etch'''
|'''GaN Etch'''
|'''GaN Etch for Si check'''
|-  
|-  
|Cl<sub>2</sub> flow
|Cl<sub>2</sub> flow
|30 sccm
|30 sccm
|27 sccm
|-
|-
|Ar flow
|Ar flow
|10 sccm
|10 sccm
|3 sccm
|-
|BCl3 flow
|0 sccm
|3 sccm
|-
|-
|Platen power
|Platen power
|200 W
|200 W
|75 W
|-
|-
|Coil power
|Coil power
|600 W
|600 W
|400 W
|-  
|-  
|Pressure
|Pressure
|2 mTorr
|2 mTorr
|4 mTorr
|-
|-
|Platen chiller  temperature
|Platen chiller  temperature
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|-
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