Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3: Difference between revisions

Revision as of 13:30, 17 January 2017

**Process runs**
Date	Substrate Information				Process Information				SEM Images
Date	Wafer info	Mask	Material/ Exposed area	Tool / Operator	Conditioning	Recipe	Wafer ID	Comments	SEM Images
3/12-2014	1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/jml/showerhead/Cpoly3, 20 cycles or 2:12 minutes	S004730	New showerhead

Revision as of 13:57, 11 December 2014 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits Created page with " {\| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" \|+ '''Process runs''' \|- ! rowspan="2" width="40"\| Date ! colspan="4" width="120"\| Substrate Informat..."		Revision as of 13:30, 17 January 2017 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits No edit summary Newer edit →
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