Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 73: | Line 73: | ||
|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> 8min | |<!--'''Process time'''--> 8min | ||
|<!--'''Comment'''--> | |<!--'''Comment'''--> repeated s007416 and s007468 with a barc etch step. This improved the uniformity of the etch performance over different linewidth and improved the selectivity to the mask and the profile angle. AFter this I continued with barc etch. | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File:ICP metal s007565_02.jpg|100px|frameless]] [[File:ICP metal s007565_06.jpg|100px|frameless]] | [[File:ICP metal s007565_02.jpg|100px|frameless]] [[File:ICP metal s007565_06.jpg|100px|frameless]] | ||
| Line 111: | Line 111: | ||
|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> 10min | |<!--'''Process time'''--> 10min | ||
|<!--'''Comment'''--> | |<!--'''Comment'''--> Repeated s007416 with double time. | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File:ICP metal s007468_12.jpg|100px|frameless]] [[File:ICP metal s007468_15.jpg|100px|frameless]] | [[File:ICP metal s007468_12.jpg|100px|frameless]] [[File:ICP metal s007468_15.jpg|100px|frameless]] | ||