Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|s007565 (as 16) | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' --> barc etch CF 40s | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 100W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 26sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 8min | |||
|<!--'''Comment'''--> | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007565_02.jpg|100px|frameless]] [[File:ICP metal s007565_06.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
44.5% (2µm pitch)<br> | |||
46.8% (3µm pitch)<br> | |||
47.8% (4µm pitch) | |||
|<!--'''Profile angles'''--> | |||
87-88 | |||
|<!--'''Etch depth in SiO2'''--> | |||
779 nm (2µm pitch)<br> | |||
862 nm (3µm pitch)<br> | |||
854 nm (4µm pitch) | |||
|<!--'''Etch rate'''--> | |||
97.4 nm/min (2µm pitch)<br> | |||
107.8 nm/min (3µm pitch)<br> | |||
106.8 nm/min (4µm pitch) | |||
|<!--'''Etch depth in resist'''--> | |||
130nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:6.0 (2µm pitch)<br> | |||
1:6.6 (3µm pitch)<br> | |||
1:6.6 (4µm pitch) | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |||
|s007468 (as 16) | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 100W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 26sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 10min | |||
|<!--'''Comment'''--> | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007468_12.jpg|100px|frameless]] [[File:ICP metal s007468_15.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
17.3% (1µm pitch)<br> | |||
33.5% (2µm pitch)<br> | |||
38.3% (3µm pitch)<br> | |||
41.4% (4µm pitch) | |||
|<!--'''Profile angles'''--> | |||
76-78 | |||
|<!--'''Etch depth in SiO2'''--> | |||
850 nm (1µm pitch)<br> | |||
1034 nm (2µm pitch)<br> | |||
1048 nm (3µm pitch)<br> | |||
1055 nm (4µm pitch) | |||
|<!--'''Etch rate'''--> | |||
85 nm/min (1µm pitch)<br> | |||
103.4 nm/min (2µm pitch)<br> | |||
104.8 nm/min (3µm pitch)<br> | |||
105.5 nm/min (4µm pitch) | |||
|<!--'''Etch depth in resist'''--> | |||
300nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:2.8 (1µm pitch)<br> | |||
1:3.4 (2µm pitch)<br> | |||
1:3.5 (3µm pitch)<br> | |||
1:3.5 (4µm pitch) | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |- | ||
|s007416 | |s007416 | ||