Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> 5min | |<!--'''Process time'''--> 5min | ||
|<!--'''Comment'''--> Started plasma on the 4th try | |<!--'''Comment'''--> From S007411 the platen power was decreased to avoid trenching. The etch rate went down and some variation in profile angle is seen from small opening to large opening. Started plasma on the 4th try | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File:ICP metal s007416_05.jpg|100px|frameless]] [[File:ICP metal s007416_06.jpg|100px|frameless]] | [[File:ICP metal s007416_05.jpg|100px|frameless]] [[File:ICP metal s007416_06.jpg|100px|frameless]] | ||