Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|<!--'''Comment'''--> | |<!--'''Comment'''--> From s007409 the Gas flow ratio between C4F8 and H2 has been changed to more C4F8 and less H2. This increased´s the etch rate (more fluor). Trenching is seen and tappered sidewall is seen indicating a physical. | ||
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