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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 73: Line 73:
|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''--> Increased the platen power. The selectivity and profile looks good but the resist profile has been rounded more on the edge and this will effect the profile for a deeper etch.
|<!--'''Comment'''-->  
|<!--'''Results'''-->
|<!--'''Results'''-->
[[File:ICP metal s007419_17.jpg|100px|frameless]] [[File:ICP metal s007419_21.jpg|100px|frameless]]
[[File:ICP metal s007411_01.jpg|100px|frameless]] [[File:ICP metal s007411_02.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
trench opening as a fraction of pitch-->
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