Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
| Line 61: | Line 61: | ||
| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *New silicon wafers (No need RCA cleaned) | ||
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Wafers from the LPCVD furnaces | *Wafers from the LPCVD furnaces | ||