Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
| Line 95: | Line 95: | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
| | |1000 | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
| | |200 | ||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
| Line 104: | Line 104: | ||
|- | |- | ||
|C<sub>4</sub>F<sub>8</sub> flow [sccm] | |C<sub>4</sub>F<sub>8</sub> flow [sccm] | ||
| | |10 | ||
|- | |- | ||
|H<sub>2</sub> flow [sccm] | |H<sub>2</sub> flow [sccm] | ||
| | |26 | ||
|- | |- | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
| | |2.5 | ||
|- | |- | ||
|} | |} | ||