Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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 *[[/By BGHE|Tests done by Berit]]
 *Test by Zhibo Li @Danchip ''dec. 2016'' - based on the work of Peixiong and Berit: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]
+<br/>
+[[Image:section under construction.jpg|70px]]
+{| border="2" cellspacing="2" cellpadding="3"
+|-style="background:Gray; color:White"
+!Parameter
+!Recipe on ICP metal: A SiO2 etch with C4F8 with resist mask
+|-
+|Coil Power [W]
+|200
+|-
+|Platen Power [W]
+|25
+|-
+|Platen temperature [<sup>o</sup>C]
+|0
+|-
+|C<sub>4</sub>F<sub>8</sub> flow [sccm]
+|20
+|-
+|H<sub>2</sub> flow [sccm]
+|10
+|-
+|Pressure [mTorr]
+|3
+|-
+|}
+{| border="2" cellspacing="2" cellpadding="3"
+|-style="background:Black; color:White"
+!Results
+!Test on wafer with 50% load (Travka 50), by BGHE @danchip
+!100% load on 100mm wafers with Barc and KRF (no mask)
+|-
+|Etch rate of thermal oxide
+|'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)''
+|
+|-
+|Selectivity to  resist [:1]
+| (SiO2:resist)
+|
+|-
+|Cr etch rate
+|1.6 nm/min (1:90 to SiO2) ''by Martin Lind Ommen (fall 2016)''
+|
+|-
+|Profile [<sup>o</sup>]
+|
+|
+|-
+|Wafer uniformity map (click on the image to view a larger image)
+|
+|
+|-
+|SEM profile images
+|
+|
+|-
+|Etch rate in barc
+|
+|
+|-
+|Etch rate in KRF resist
+|
+|-
+|}
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