Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

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| Sputter target with NiV composition: Ni/V 93/7%
| *Sputter target with NiV composition: Ni/V 93/7%
Substrate rotation
*Substrate rotation
Substrate RF Bias (optional)
*Substrate RF Bias (optional)
| Sputter target with NiV composition: Ni/V 93/7%
| *Sputter target with NiV composition: Ni/V 93/7%
No substrate rotation
*No substrate rotation
No substrate RF Bias  
*No substrate RF Bias  
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|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"

Revision as of 11:55, 3 January 2017

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Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or Wordentec


In the chart below you can compare the different deposition equipment.

Sputter deposition (Sputter-System Lesker) Sputter deposition (Wordentec)
General description Sputter deposition of NiV Sputter deposition of NiV
Pre-clean RF Ar clean RF Ar clean
Layer thickness About 10Å to 5000Å
Deposition rate Depending on process parameters. Depending on process parameters.
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers(No substrate heating)
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Target size 2 inch sputter target 6 inch sputter target
Comment *Sputter target with NiV composition: Ni/V 93/7%
  • Substrate rotation
  • Substrate RF Bias (optional)
*Sputter target with NiV composition: Ni/V 93/7%
  • No substrate rotation
  • No substrate RF Bias