Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:WhiteSmoke; color:black"|<b> | |style="background:WhiteSmoke; color:black"|<b>ALD2 (PEALD)</b> | ||
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!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
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*Al<sub>2</sub>O<sub>3</sub> | *Al<sub>2</sub>O<sub>3</sub> | ||
*TiO<sub>2</sub> (amorphous or anatase) | *TiO<sub>2</sub> (amorphous or anatase) | ||
*SiO<sub>2</sub> | |||
*HfO<sub>2</sub> | |||
*TiN | |||
*AlN | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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* | *Samples and single wafers are loaded through the load lock | ||
* | *100 mm and smaller are loaded on a carrier plate (150 mm) | ||
*150 mm or 200 mm wafer don't need the carrier plate | |||
*Up to 5 wafers when doing thermal ALD of oxides wafer size 100 mm, 150 mm and 200 mm | |||
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| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
