Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

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	I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.		I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
	Zhibo Li @ Danchip has also tried with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]		Zhibo Li @ Danchip has also tried with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]