Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

From LabAdviser
Paphol (talk | contribs)
Paphol (talk | contribs)
Line 3: Line 3:
==Sputtering of Nickel Vanadium==
==Sputtering of Nickel Vanadium==


Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or PVD co-sputter/evaporation
Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker)  
 


In the chart below you can compare the different deposition equipment.
In the chart below you can compare the different deposition equipment.

Revision as of 09:00, 28 November 2016

Feedback to this page: click here

Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker)

In the chart below you can compare the different deposition equipment.

Sputter deposition (Sputter-System Lesker)
General description Sputter deposition of NiV
Pre-clean RF Ar clean
Layer thickness About 10Å to 5000Å
Deposition rate Depending on process parameters.
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed substrates
  • Silicon wafers
  • Quartz wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment Sputter target with NiV composition: Ni/V 93/7%