Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]]) | ! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
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! General description | ! General description | ||
|LPCVD (low pressure cheimical vapour deposition) of polysilicon | |LPCVD (low pressure cheimical vapour deposition) of polysilicon | ||
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! Doping facility | ! Doping facility | ||
|Can be doped with boron or phosphorus during deposition | |Can be doped with boron or phosphorus during deposition | ||
|None | |None | ||
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! Pre-clean | ! Pre-clean | ||
|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | |New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | ||
|RF Ar clean | |RF Ar clean | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|~50Å to 2µm, if thicker layers are needed please ask the furnace team. | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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! Deposition rate | ! Deposition rate | ||
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*undoped, boron doped:~100Å/min | *undoped, boron doped:~100Å/min | ||
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! Process temperature | ! Process temperature | ||
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | ||
|? | |? | ||
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! Step coverage | ! Step coverage | ||
|Good | |Good | ||
|. | |. | ||
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! Adhesion | ! Adhesion | ||
|Good for fused silica, silicon oxide, silicon nitride, silicon | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
|. | |. | ||
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! Batch size | ! Batch size | ||
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*1-30 wafers (4" furnace) | *1-30 wafers (4" furnace) | ||
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! Allowed substrates | ! Allowed substrates | ||
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* Silicon wafers (new or RCA cleaned) | * Silicon wafers (new or RCA cleaned) | ||
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! Allowed material | ! Allowed material | ||
| Only those above (under allowed substrates). | | Only those above (under allowed substrates). | ||
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! Comment | ! Comment | ||
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