Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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!
!


![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|
*Reactive Sputtering ( 6" Al target) or AlN target sputtering
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|
*Reactive Sputtering ( 2" Al target)  
*Reactive Sputtering ( 2" Al target)  
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry
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*Depend on the target power
|
|
*Not tested
*Not tested
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
|
* 0nm - 200nm
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|
* 0nm - 200nm
* 0nm - 200nm
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
|
* Not tested
|
|
* Not tested
* Not tested
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Very good
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|
*Very good
*Very good
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!Process Temperature
!Process Temperature
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* Up to 400<sup>o</sup>C
* Up to 600<sup>o</sup>C
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* Up to 450<sup>o</sup>C
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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* 100 mm wafers (Up to 12 wafers at a time)
* 150 mm wafers (Up to 4 wafers at a time)
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* chips
* chips
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*SU-8  
*SU-8  
*Any metals  
*Any metals  
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*almost any
|-
|-
|}
|}

Revision as of 10:55, 19 September 2016

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Lesker Sputter System.

Only one method at the moment

Sputter System Lesker
Generel description
  • Reactive Sputtering ( 2" Al target)
Stoichiometry
  • Not tested
Film Thickness
  • 0nm - 200nm
Deposition rate
  • Not tested
Step coverage
  • Very good
Process Temperature
  • Up to 600oC
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
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