Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
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*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | *RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | ||
*Reactive Sputtering (never tested) | *Reactive Sputtering (never tested) | ||
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry | ||
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*Not tested | *Not tested | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Film Thickness | !Film Thickness | ||
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* 0nm - 200nm | * 0nm - 200nm | ||
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* 0,3nm/min | * 0,3nm/min | ||
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*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | *0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | ||
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*unknown | *unknown | ||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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* Up to 450<sup>o</sup>C | * Up to 450<sup>o</sup>C | ||
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*150<sup>o</sup>C - 350<sup>o</sup>C: | *150<sup>o</sup>C - 350<sup>o</sup>C: | ||
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!More info on Al<sub>2</sub>O<sub>3</sub> | !More info on Al<sub>2</sub>O<sub>3</sub> | ||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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* 1x 100 mm wafer | * 1x 100 mm wafer | ||
* 1x 150 mm wafer | * 1x 150 mm wafer | ||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
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*almost any | *almost any | ||
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*Silicon | *Silicon | ||