Specific Process Knowledge/Etch/III-V ICP/GaAsnano: Difference between revisions

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{| border="1" cellspacing="2" cellpadding="3"  align="left"
{| border="1" cellspacing="2" cellpadding="3"  align="left"
|colspan="2" align="center"| '''Results (GaAs Nano Etch)'''  
|colspan="2" align="center"| '''Results (GaAs Nano Etch)''' ''from 2011 by Thor Ansbæk @photonic''
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|GaAs
|GaAs

Revision as of 07:53, 19 September 2016

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GaAs nano etch

Recipe GaAs Nano Etch
Cl2 flow 4 sccm
Ar flow 12 sccm
Platen power 80 W
Coil power 700 W
Pressure 6 mTorr
Platen chiller temperature 20 oC


Results (GaAs Nano Etch) from 2011 by Thor Ansbæk @photonic
GaAs 5 nm/s
AlInP 1 nm/s
HSQ 1.5 nm/s
ZEP520a 2 nm/s
Si3N4 2 nm/s
GaAs sample with a ZEP520a masking layer etched for 1 min 15 s with the "GaAs Nano Etch" recipe. Thor Ansbæk, DTU Photonics, 2011.
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