Jump to content

Specific Process Knowledge/Etch/III-V ICP/GaAsnano: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,565 edits
No edit summary
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
No edit summary
Line 29: Line 29:


{| border="1" cellspacing="2" cellpadding="3"  align="left"
{| border="1" cellspacing="2" cellpadding="3"  align="left"
|colspan="2" align="center"| '''Results (GaAs Nano Etch)'''  
|colspan="2" align="center"| '''Results (GaAs Nano Etch)''' ''from 2011 by Thor Ansbæk @photonic''
|-  
|-  
|GaAs
|GaAs

Revision as of 07:53, 19 September 2016

Feedback to this page: click here

GaAs nano etch

Recipe GaAs Nano Etch
Cl2 flow 4 sccm
Ar flow 12 sccm
Platen power 80 W
Coil power 700 W
Pressure 6 mTorr
Platen chiller temperature 20 oC


Results (GaAs Nano Etch) from 2011 by Thor Ansbæk @photonic
GaAs 5 nm/s
AlInP 1 nm/s
HSQ 1.5 nm/s
ZEP520a 2 nm/s
Si3N4 2 nm/s
GaAs sample with a ZEP520a masking layer etched for 1 min 15 s with the "GaAs Nano Etch" recipe. Thor Ansbæk, DTU Photonics, 2011.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP/GaAsnano&oldid=24813"