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Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions

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7. Nitrogen purge, 3.5 min
7. Nitrogen purge, 3.5 min
===Equipment performance and process related parameters===
{| border="2" cellspacing="0" cellpadding="2"
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Promotion of photoresist adhesion
by hydrophobization
|-
!style="background:silver; color:black;" align="center" width="60"|Chemical
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
hexamethyldisilizane
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black" align="center"|
82° (on SiO<sub>2</sub>)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters
|style="background:LightGrey; color:black"|Process temperature
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
150 °C
|-
|style="background:LightGrey; color:black"|Process time
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
32.5 minutes
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Silicon, glass, and polymer substrates
Film or pattern of all but Type IV and resist/polymer
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1 - 25, multiple batches possible
|-
|}
<br clear="all" />


==Oven: HMDS 2==
==Oven: HMDS 2==