Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
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|Wet etch of pure Al | |Wet etch of pure Al | ||
|Wet etch of Al + 1.5% Si | |Wet etch of Al + 1.5% Si | ||
|Wet etch/removal: TMAH | |||
|Dry plasma etch of Al | |Dry plasma etch of Al | ||
|Sputtering of Al - pure physical etch | |Sputtering of Al - pure physical etch | ||
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*~60nm/min (Al+1.5% Si) | *~60nm/min (Al+1.5% Si) | ||
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*~0.5nm/min (pure Al) | |||
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*~350 nm/min (depending on features size and etch load) | *~350 nm/min (depending on features size and etch load) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Etch profile | !Etch profile | ||
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*Isotropic | |||
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*Isotropic | *Isotropic | ||
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*<nowiki>#</nowiki>1-25 100 mm wafers | *<nowiki>#</nowiki>1-25 100 mm wafers | ||
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*? | |||
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*smaller pieces on a carrier wafer | *smaller pieces on a carrier wafer | ||
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*Photoresist | *Photoresist | ||
*E-beam resist | *E-beam resist | ||
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*Silicon | *Silicon | ||