Specific Process Knowledge/Bonding/Fusion bonding: Difference between revisions
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*Close the chamber. | *Close the chamber. | ||
*Turn the µm screw on top of the chamber to set the desired stack height. | *Turn the µm screw on top of the chamber to set the desired stack height. | ||
*After pre bonding in the EVG NIL the wafers are to be annealed in the bond fornace (C3) at 1000<sup>o</sup>C. | |||