Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions

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	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.


	===Bonding procedure===		===Bonding procedure===