Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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==Test of the deposition rate of Silicon and film characteristics== | ==Test of the deposition rate of Silicon and film characteristics== | ||
{| border="2" cellspacing="1" cellpadding="3" align="left" | |||
! | |||
!Recipe 2 - with the new (small) grids) | |||
|- | |||
|Platen angle | |||
|10 degrees | |||
|- | |||
|Platen rotation speed | |||
|20rpm | |||
|- | |||
|Ar(N) flow | |||
|4 sccm | |||
|- | |||
|Ar(dep. source) flow | |||
|8 sccm | |||
|- | |||
|I(N) | |||
|240mA | |||
|- | |||
|Power setting | |||
|700W | |||
|- | |||
|I(B) | |||
|200mA | |||
|- | |||
|V(B) | |||
|1100V | |||
|- | |||
|Vacc(B) | |||
|400V | |||
|- | |||
|} | |||
<br clear="all" /> | |||
===Results with recipe 2 and the new (small) grids=== | |||
{| border="2" cellspacing="1" cellpadding="3" align="left" | |||
!Depostion time | |||
!10 min (2016-08-04 bghe) | |||
|- | |||
|Characterization method | |||
|Ellipsometer 3 angles | |||
|- | |||
|Deposition thickness | |||
|50 nm (2016-08-04 bghe) | |||
|- | |||
|Deposition rate | |||
|5.0 nm/min | |||
|- | |||
|Refractive index @632nm | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|Refractive index @1000nm <br/> | |||
@950nm using the ellipsometer | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|Refractive index @1550nm <br/> | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|} | |||
<br clear="all" /> | |||
===Recipe=== | ===Recipe=== |
Revision as of 07:40, 5 August 2016
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Test of the deposition rate of Silicon and film characteristics
Recipe 2 - with the new (small) grids) | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 240mA |
Power setting | 700W |
I(B) | 200mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results with recipe 2 and the new (small) grids
Depostion time | 10 min (2016-08-04 bghe) |
---|---|
Characterization method | Ellipsometer 3 angles |
Deposition thickness | 50 nm (2016-08-04 bghe) |
Deposition rate | 5.0 nm/min |
Refractive index @632nm |
n=? |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
Refractive index @1550nm |
n=? |
Recipe
Recipe 1 - with the old (large) grids) | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 320mA |
Power | 700W |
I(B) | 280mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results with recipe 1 and the old (large) grids
Depostion time | 10 min (before 2013) | 30 min (before 2013) | 30 min (before 2013) | 30 min (2013-10-4) |
---|---|---|---|---|
Characterization method | FilmTek | FilmTek | Ellipsometer 3 angles | Ellipsometer 3 angles |
Deposition thickness | 71 nm | 229 nm | 242 nm | 194 nm (2013-10-4) |
Deposition rate | 7.1 nm/min | 7.6 nm/min | 8.1 nm/min | 6.5 nm/min |
Refractive index @632nm |
n=4.55 |
n=4.916 |
n=4.589 |
n=4.625 |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
n=4.297 |
n=4.136 |
n=4.206 |
Refractive index @1550nm |
n=? |
n=? |
n=? |
n=3.970 |
Roughness | 6.1 nm | 10.4 nm | 1.1 nm | 0.9 nm |