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| !Bonding temperature in EVG NIL | | !Bonding temperature in EVG NIL |
| |- valign="top" | | |- valign="top" |
| | | | |AuSi |
| |For bonding two substrates by use of an interphase that makes an eutecticum. | | |AuSn |
| |For bonding two identical materials. | | |AuSnNi |
| |For bonding Si and Glass.
| |
| |-valign="top" | | |-valign="top" |
| |'''Bonding temperature''' | | |365<sup>o</sup>C |
| |Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C.
| | |<300<sup>o</sup>C |
| |Depending on defects 50<math>^o</math>C to 400<math>^o</math>C. | | |. |
| |Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C. | |
| |-valign="top" | | |-valign="top" |
| |'''Annnealing temperature''' | | |390<sup>o</sup>C |
| |No annealing
| | |300<sup>o</sup>C |
| |1000<math>^o</math>C in the bond furnace C3 | | |. |
| |No annealing | |
| |-valign="top" | | |-valign="top" |
| |'''Materials possible to bond'''
| |
| |Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si
| |
| |Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
| |
| |Si/Pyrex (glass)
| |
| |-valign="top"
| |
| |'''Substrate size'''
| |
| |Up to 6" (aligning only possible for 4" and 6")
| |
| |Up to 6" (aligning only possible for 4" and 6")
| |
| |Up to 6" (aligning only possible for 4" and 6")
| |
| |-valign="top"
| |
| |'''Cleaning'''
| |
| |Cleaning by N2.
| |
| |Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
| |
| |Cleaning by N2.
| |
| |-valign="top"
| |
| |'''IR alignment'''
| |
| |Double side polished wafers.
| |
| |Double side polished wafers.
| |
| |Not relevant.
| |
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| |
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| |- | | |- |
