Specific Process Knowledge/Etch/III-V ICP/GaAsnano: Difference between revisions

From LabAdviser
Newer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
Created page with "'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etc..."
 
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,416 edits
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAsnano click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAsnano click here]'''  
 
=== GaAs nano etch ===
=== GaAs nano etch ===


Revision as of 10:41, 1 August 2016

Feedback to this page: click here

GaAs nano etch

Recipe GaAs Nano Etch
Cl2 flow 4 sccm
Ar flow 12 sccm
Platen power 80 W
Coil power 700 W
Pressure 6 mTorr
Platen chiller temperature 20 oC


Results (GaAs Nano Etch)
GaAs 5 nm/s
AlInP 1 nm/s
HSQ 1.5 nm/s
ZEP520a 2 nm/s
Si3N4 2 nm/s
GaAs sample with a ZEP520a masking layer etched for 1 min 15 s with the "GaAs Nano Etch" recipe. Thor Ansbæk, DTU Photonics, 2011.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP/GaAsnano&oldid=24536"