Specific Process Knowledge/Bonding: Difference between revisions

Revision as of 10:31, 13 March 2008

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding two substrates by use of an interphase that makes an eutecticum.	For bonding two identical materials.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $^{o}$ C to 400 $^{o}$ C.	Depending on defects 50 $^{o}$ C to 400 $^{o}$ C.	Depending on the voltage 300 $^{o}$ C to 500 $^{o}$ C Standard is 400 $^{o}$ C.
Annnealing temperature	No annealing	1000Failed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle ^o} C in the bond furnace C3	No annealing
Materials possible to bond	Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6" (aligning only possible for 4" and 6")	Up to 6" (aligning only possible for 4" and 6")	Up to 6" (aligning only possible for 4" and 6")
Cleaning	Cleaning by N2.	Wet chemical cleaning, IMEC.	Cleaning by N2.
IR alignment	Double side polished wafers.	Double side polished wafers.	Not relevant.

@@ Line 41: / Line 41: @@
 |Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
 |Cleaning by N2.
+|-valign="top"
+|'''IR alignment'''
+|Double side polished wafers.
+|Double side polished wafers.
+|Not relevant.
 |-
 |}