Specific Process Knowledge/Lithography/ARP617: Difference between revisions

Revision as of 05:52, 14 July 2016

Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 617.05 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 13-06-2014
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	2000	256.70	0.96
3000	2000	208.33	1.24
4000	2000	185.41	0.50
5000	2000	168.34	0.88
6000	2000	161.90	1.99

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	Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch.		Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch. Furthermore, it is softbaked at temperatures above 200 degrees and thus themally stable to many post-processing steps.