Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

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Revision as of 11:24, 12 July 2016

Resist Polarity Manufacturer Comments Technical reports Developer Rinse Remover Process flows (in docx-format)
mr EBL 6000.1 Positive MicroResist Standard negative resist mrEBL6000 processing Guidelines.pdf‎ mr DEV IPA mr REM Process_Flow_mrEBL6000.docx‎





3 week project on mrEBL6000 by William Tiddi

mrEBL6000 was studied April 2015 by William Tiddi; the report can be found here‎.




Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 103 0.5
3000 88 0.4
4000 78 0.4
5000 71 0.7
6000 68 0.5
7000 66 0.6
MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 50 0.2
3000 42 0.5
4000 38 0.5
5000 34 0.3
6000 32 0.3
7000 32 0.3



Contrast Curve

The contrast curve is measured on lines 100 nm in width, exposed with doses in the range of 6-63 µC/cm2. After exposure, the sample has been post-exposure baked 5 min @ 110 degree C. Development is performed with mr-DEV 600 in 40s followed by an IPA rinse 60s. These measurements are performed by WILTID April 2015.