|
|
| Line 1: |
Line 1: |
|
| |
|
|
| |
|
| {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" width="90%"
| |
| |-
| |
|
| |
|
| |-
| |
| |-style="background:Black; color:White"
| |
| |'''Resist'''
| |
| |'''Polarity'''
| |
| |'''Manufacturer'''
| |
| |'''Comments'''
| |
| |'''Technical reports'''
| |
| |'''Spinner'''
| |
| |'''Developer'''
| |
| |'''Rinse'''
| |
| |'''Remover'''
| |
| |'''Process flows (in docx-format)'''
| |
|
| |
|
| |-
| | Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@danchip.dtu.dk lithography] at DTU Danchip. |
|
| |
|
| |-
| |
| |-style="background:White; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
| |
| |Positive
| |
| |[http://www.allresist.com AllResist]
| |
| |Standard positive resist, very similar to ZEP520.
| |
| |[[media:Allresist_CSAR62_English.pdf|Allresist_CSAR62_English.pdf]],, [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]]
| |
| |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
| |
| |XAR-600-546, XAR-600-548, N50, MIBK:IPA
| |
| |IPA
| |
| |AR-600-71, 1165 Remover
| |
| |[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]]
| |
| |}
| |
|
| |
|
| |
| Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
| |
|
| |
|
| |
|
| |
|
| |
|
| |
|
| |
|
| |
| {| cellpadding="2" style="border: 2px solid darkgray;" align="right"
| |
| ! width="200" |
| |
| |- border="0"
| |
| |[[File:5b_11.jpg|right|200px]]
| |
| |- align="center"
| |
| | Residues: After a dry etch, residues are very easily observed by SEM inspection. This particular trench was e-beam patterned at a too low dose. Residues are recommended removed by optimising dose and developing, not by plasma ashing, since our plasma ashers in the cleanroom are 'dirty' and most likely generate particles on the substrate.
| |
| |}
| |
|
| |
|
| == Spin Curves == | | == Spin Curves == |
