Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
No edit summary
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Line 28: Line 28:
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|}
|}
== Process Flow ==
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|-
|-style="background:Black; color:White"
!Equipment
!Process Parameters
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Pretreatment
|-
|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|1 min @ 110 degC, hotplate
|
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Spin Coat
|-
|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|mr EBL 6000.1 E-beam resist
60 sec at various spin speed.
Acceleration 2000 s-2,
softbake 3 min at 110 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|E-beam Exposure
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Development
|-
|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|-
|}




Revision as of 10:49, 6 July 2016

Resist Polarity Manufacturer Comments Technical reports Developer Rinse Remover Process flows (in docx-format)
mr EBL 6000.1 Positive MicroResist Standard negative resist mrEBL6000 processing Guidelines.pdf‎ mr DEV IPA mr REM Process_Flow_mrEBL6000.docx‎


Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 103 0.5
3000 88 0.4
4000 78 0.4
5000 71 0.7
6000 68 0.5
7000 66 0.6
MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 50 0.2
3000 42 0.5
4000 38 0.5
5000 34 0.3
6000 32 0.3
7000 32 0.3
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/mrEBL6000&oldid=24321"