Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions
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|'''Technical reports''' | |'''Technical reports''' | ||
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|Standard negative resist | |Standard negative resist | ||
|[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | |[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | ||
|mr DEV | |mr DEV | ||
|IPA | |IPA | ||
Revision as of 10:48, 6 July 2016
| Resist | Polarity | Manufacturer | Comments | Technical reports | Developer | Rinse | Remover | Process flows (in docx-format) |
| mr EBL 6000.1 | Positive | MicroResist | Standard negative resist | mrEBL6000 processing Guidelines.pdf | mr DEV | IPA | mr REM | Process_Flow_mrEBL6000.docx |
Process Flow
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
| Equipment | Process Parameters | Comments | |
|---|---|---|---|
| Pretreatment | |||
| 4" Si wafers | 1 min @ 110 degC, hotplate | ||
| Spin Coat | |||
| Spin Coater Manual, LabSpin, A-5 | mr EBL 6000.1 E-beam resist
60 sec at various spin speed. Acceleration 2000 s-2, softbake 3 min at 110 deg Celcius |
Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | |
| Characterization | |||
| Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | |
| E-beam Exposure | |||
| JEOL 9500 E-beam writer, E-1 | Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2 |
Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | |
| Development | |||
| Fumehood, D-3 | 60 sec in
60 sec rinse in IPA, N2 Blow dry |
Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun. | |
| Characterization | |||
| Zeiss SEM Supra 60VP, D-3 | 2-3 kV, shortest working distance possible, chip mounted with Al tape | The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information. | |
Spin Curve
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.
9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
| MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC. | ||
|---|---|---|
| Spin Speed [rpm] | Thickness [nm] | St Dev |
| 2000 | 103 | 0.5 |
| 3000 | 88 | 0.4 |
| 4000 | 78 | 0.4 |
| 5000 | 71 | 0.7 |
| 6000 | 68 | 0.5 |
| 7000 | 66 | 0.6 |
| MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC. | ||
|---|---|---|
| Spin Speed [rpm] | Thickness [nm] | St Dev |
| 2000 | 50 | 0.2 |
| 3000 | 42 | 0.5 |
| 4000 | 38 | 0.5 |
| 5000 | 34 | 0.3 |
| 6000 | 32 | 0.3 |
| 7000 | 32 | 0.3 |