Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions
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==Comparison of samples dried in air and with Critical Point Dryer== | ==Comparison of samples dried in air and with Critical Point Dryer== | ||
This shows a comparison of samples that have been dried in the critical point dryer, and samples that have been dried in air. | This shows a comparison of samples that have been dried in the critical point dryer, and samples that have been dried in the air. | ||
Pictures below are shown 2 samples that have been prepared in the same way- but dried with different methods after the final etching step. | |||
Cantilevers of SiN, up to 710 µm long and 100 µm wide, are fabricated in the etching step. The thickness of the cantilevers is about 0.5 µm | Cantilevers of SiN, up to 710 µm long and 100 µm wide, are fabricated in the etching step. The thickness of the cantilevers is about 0.5 µm | ||
After drying wafers in air, the majority of the cantilevers are bended and sticking to the underlying surface. But after the wafers were dried in Critical point dryer, the cantilevers were free hanging. | After drying wafers in the air, the majority of the cantilevers are bended and sticking to the underlying surface. But after the wafers were dried in Critical point dryer, the cantilevers were free hanging. | ||