Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1: Difference between revisions
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| ICP Metal Etch / jmli | | ICP Metal Etch / jmli | ||
| 2*30 sec barc etch using 'slow etch with carrier' | | 2*30 sec barc etch using 'slow etch with carrier' | ||
| isoslow1 , 2:00 minutes | | danchip/jmlli/Si/isotropice/isoslow1 , 2:00 minutes | ||
| S005292 | | S005292 | ||
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Revision as of 09:52, 24 June 2016
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 9/9-2014 | 6" First DUV box wafer | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | ICP Metal Etch / jmli | 2*30 sec barc etch using 'slow etch with carrier' | danchip/jmlli/Si/isotropice/isoslow1 , 2:00 minutes | S005292 |
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