Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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4,416 edits
Line 35: Line 35:
| 20            <!--Temperature  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 90 ?          <!--Pressure  -->
| 90           <!--Pressure  -->
|       <!--Process chamber setup  -->
| -      <!--Process chamber setup  -->
| 50 ?            <!--SF6 flow  -->
| 50             <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--C4F8 flow  -->
Line 49: Line 49:
| 400            <!--Coil power  -->
| 400            <!--Coil power  -->
| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Main Page/Process Logs/jmli/IcpMetal/Si/isotropic/isoslow1 | 1]]       <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|1 ]]     <!-- link processes -->
| NA          <!--Keywords  -->
| NA          <!--Keywords  -->
|-
| '''r'''  || A || 20 || - || 28 || LF+B100 || 30 || 37 || 0 || 0 || 0 || 0 || 0  || 0 || 0 || 0  || 0 || 100
|| [[Main Page/Process Logs/jmli/IcpMetal/BS/rdabs2 | 1]]  || NA 
|-
|-
|}
|}

Revision as of 09:45, 24 June 2016

Isotropic etching in silicon on the ICP Metal Etch

Process parameters
Recipe Step Temp. Time Pres. Hardware Gasses RF powers Observations
SF6 O2 C4F8 Ar CF4 H2 CH4 BCl3 Cl2 HBr Coil Platen Runs Keywords
isoslow1 A 20 - 90 - 50 0 0 0 0 0 0 0 0 0 400 3 1 NA
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