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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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| 20            <!--Temperature  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 90 ?          <!--Pressure  -->
| 90           <!--Pressure  -->
|       <!--Process chamber setup  -->
| -      <!--Process chamber setup  -->
| 50 ?            <!--SF6 flow  -->
| 50             <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--C4F8 flow  -->
Line 49: Line 49:
| 400            <!--Coil power  -->
| 400            <!--Coil power  -->
| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Main Page/Process Logs/jmli/IcpMetal/Si/isotropic/isoslow1 | 1]]       <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|1 ]]     <!-- link processes -->
| NA          <!--Keywords  -->
| NA          <!--Keywords  -->
|-
| '''r'''  || A || 20 || - || 28 || LF+B100 || 30 || 37 || 0 || 0 || 0 || 0 || 0  || 0 || 0 || 0  || 0 || 100
|| [[Main Page/Process Logs/jmli/IcpMetal/BS/rdabs2 | 1]]  || NA 
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