Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions
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! rowspan="2" width="20"| [[ | ! rowspan="2" width="20"| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Hardware | Hardware]] | ||
! colspan="10" | Gasses | ! colspan="10" | Gasses | ||
! colspan="2" | RF powers | ! colspan="2" | RF powers | ||
Revision as of 09:34, 24 June 2016
Isotropic etching in silicon on the ICP Metal Etch
| Recipe | Step | Temp. | Time | Pres. | Hardware | Gasses | RF powers | Observations | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SF6 | O2 | C4F8 | Ar | CF4 | H2 | CH4 | BCl3 | Cl2 | HBr | Coil | Platen | Runs | Keywords | ||||||
| isoslow1 | A | 20 | - | 90 ? | 50 ? | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 400 | 3 | 1 | NA | |
| r | A | 20 | - | 28 | LF+B100 | 30 | 37 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 100 | 1 | NA |