Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-1: Difference between revisions
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! colspan="2" width="120"| Substrate Information | ! colspan="2" width="120"| Substrate Information | ||
! colspan="3" | Process Information | ! colspan="3" | Process Information | ||
! rowspan="2 | ! rowspan="2" |SEM Images | ||
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! width="30" | Wafer info | ! width="30" | Wafer info | ||
Revision as of 11:44, 22 June 2016
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.02 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.05 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.02 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.05 |
|
