Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
| Line 50: | Line 50: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Al<sub>2</sub>O<sub>3</sub> | *Al<sub>2</sub>O<sub>3</sub> | ||
*TiO<sub>2</sub> | *TiO<sub>2</sub> (amorphous or anatase) | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
| Line 56: | Line 56: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | *Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | ||
*TiO<sub>2</sub>: 0. | *TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Thickness | |style="background:LightGrey; color:black"|Thickness | ||