Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546. | Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546. | ||
The graphs shows teh measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is 0.1 nm/min. | The graphs shows teh measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min. | ||
[[File:dark erosion.png|right|400px]] | [[File:dark erosion.png|right|400px]] | ||