Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-1: Difference between revisions

From LabAdviser
Jmli (talk | contribs)
No edit summary
Jmli (talk | contribs)
No edit summary
Line 96: Line 96:
| C04047.05
| C04047.05
|  
|  
[[file:C04047.05 132.jpg|150px|frameless ]]
[[file:C04047.05 133.jpg|150px|frameless ]]
[[file:C04047.05 134.jpg|150px|frameless ]]
[[file:C04047.05 135.jpg|150px|frameless ]]
[[file:C04047.05 136.jpg|150px|frameless ]]
[[file:C04047.05 137.jpg|150px|frameless ]]
[[file:C04047.05 138.jpg|150px|frameless ]]
[[file:C04047.05 124.jpg|150px|frameless ]]
[[file:C04047.05 125.jpg|150px|frameless ]]
[[file:C04047.05 126.jpg|150px|frameless ]]
[[file:C04047.05 127.jpg|150px|frameless ]]
[[file:C04047.05 128.jpg|150px|frameless ]]
[[file:C04047.05 129.jpg|150px|frameless ]]
[[file:C04047.05 130.jpg|150px|frameless ]]
[[file:C04047.05 131.jpg|150px|frameless ]]


|-
|-
|}
|}

Revision as of 15:36, 15 June 2016


Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C03991.02


2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C03991.05

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C04047.02

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C04047.05