Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
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• > 12nm at 3kV (SE) | • > 12nm at 3kV (SE) | ||
|B | |B | ||
| | | | ||
| | * High vacuum | ||
• 0.8 nm at 30 kV (STEM) | |||
• 1.0 nm at 30 kV (SE) | |||
• 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE) | |||
*High vacuum with beam deceleration option | |||
• 3.0 nm at 1 kV (BD mode + BSE) | |||
* Low vacuum - 1.4 nm at 30 kV (SE) | |||
•2.5 nm at 30 kV (BSE) | |||
•3.0 nm at 3 kV (SE) | |||
* Extended vacuum mode (ESEM) | |||
•1.4 nm at 30 kV (SE) | |||
| | |||
* Electron Column | |||
•5nm @30kV | |||
* Ion Column | |||
•7nm @ 30kV | |||
| | | | ||
* Electron Column | * Electron Column | ||