Specific Process Knowledge/Etch/Etching of Bulk Glass: Difference between revisions

From LabAdviser
Fj (talk | contribs)
No edit summary
Fj (talk | contribs)
No edit summary
Line 12: Line 12:
! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent))
! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent))
! RIE
! RIE
! AOE
|- valign="top"
|- valign="top"
|'''General description'''
|'''General description'''
Line 20: Line 19:
*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
|
|
*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch
|-valign="top"
|-valign="top"
|'''Possible masking materials'''
|'''Possible masking materials'''
Line 33: Line 31:
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
|
|
*Photoresist
*(Poly)Silicon
*Aluminium
|- valign="top"
|- valign="top"
|'''Etch rate'''
|'''Etch rate'''
Line 44: Line 39:
*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.   
*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.   
|
|
*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
|-valign="top"
|-valign="top"
|'''Batch size'''
|'''Batch size'''
Line 52: Line 46:
*1 wafer at a time
*1 wafer at a time
|
|
*1 wafer at a time
|-valign="top"
|-valign="top"
|'''Size of substrate'''
|'''Size of substrate'''
Line 60: Line 53:
*4" wafers or smaller pieces
*4" wafers or smaller pieces
|
|
*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
|-valign="top"
|-valign="top"
|'''Allowed materials'''
|'''Allowed materials'''
Line 82: Line 74:
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
|
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
|-
|-
|}
|}

Revision as of 10:08, 11 March 2008

At Danchip, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silicate glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a strong HF-solution (isotropic etch).

Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etchings (> 10µm).

40% HF 3µm/min Beaker Maske?

Wet HF-etch of bulk glass

Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) RIE
General description
  • Isotropic etch
  • Anisotropic etch: vertical sidewalls
Possible masking materials
  • Photoresist
  • Silicon nitride
  • Photoresist
  • (Poly)Silicon
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
Etch rate
  • ~75 nm/min (Thermal oxide) in BHF
  • ~90 nm/min (Thermal oxide) in SIO Etch
  • Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.
Batch size
  • 1-25 wafers at a time
  • 1 wafer at a time
Size of substrate
  • 4" wafers
  • 4" wafers or smaller pieces
Allowed materials
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • Blue film
  • Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals that covers less the 5% of the wafer area (ONLY RIE2!)