Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch: Difference between revisions
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Revision as of 12:50, 2 June 2016
Etch processes designed for stepper resists
The stepper produces features down to 200 nm. Here, etch processes especially designed for stepper patterns and resists are described. We intend to develop them continuously so keep an eye on this page. The best ones so far are:
Recipe | Step | Temp. | Deposition step | Etch step | Process | ||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Time | Pressure | C4F8 | SF6 | O2 | Coil | Time | Pressure | C4F8 | SF6 | O2 | Coil | Platen | HW | Runs | Keywords | ||||||||||
B | M | B | M | B | M | B | M | B | M | B | M | B | M | ||||||||||||
NBoost04 | A | 20 | 2.8 | 5 | 60 | 0 | 0 | 500 | 1.5 | 3.5 | 30% | 5 | 0 | 20 | 100 | 100 | 0 | 0 | 500 | 500 | 50 | 10 | LF+B100 | 2 | VERY nice: scallops, straight sidewalls |
Recipe | Step | Temp. | Deposition step | Etch step | Process observations | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Time | Pressure | C4F8 | SF6 | O2 | Coil | Time | Pressure | C4F8 | SF6 | O2 | Coil | Platen | HW | Runs | Key words | |||
polySOI-10 | etch | 20 | 2.5 | 10 | 50 | 0 | 0 | 600 | 5 | 10 | 20 | 60 | 5 | 400 | 40 | - | 5 | very nice, blurred scallops |
polySOI-10a | etch | 20 | 2.5 | 10 | 50 | 0 | 0 | 600 | 5 | 10 | 10 | 70 | 5 | 400 | 40 | - | 200+ | very stable, excellent and extensive track record |