Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|-
! rowspan="2" width="40"| Date
! colspan="4" width="120"| Substrate Information
! colspan="4" | Process Information
! rowspan="2" width="500" |SEM Images
|-
! width="30" | Wafer info
! width="40" | Mask
! width="40" | Material/ Exposed area
! width="40" | Tool / Operator
! width="40" | Conditioning
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Comments
|-
| 6/5-2013
| 1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50%+
| Pegasus / jmli
| 3min TDESC clean + 30 sec barc etch
| polySOI5 , 50 cycles or 6:15 minutes
| S003472
|
|
[[File:S003472-1.jpg|120px|frameless ]]
[[File:S003472-2.jpg|120px|frameless ]]
[[File:S003472-3.jpg|120px|frameless ]]
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[[File:S003472-6.jpg|120px|frameless ]]
[[File:S003472-7.jpg|120px|frameless ]]
|-
| 16/7-2013
| 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier 
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50%+
| Pegasus/jmli
| 3 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes
| S003614
| lsh: c4f8 etch -> 20
|
[[file:Peg-S003614_06.jpg |120px|frameless ]]
[[file:Peg-S003614_07.jpg |120px|frameless ]]
[[file:Peg-S003614_08.jpg |120px|frameless ]]
[[file:Peg-S003614_09.jpg |120px|frameless ]]
[[file:Peg-S003614_10.jpg |120px|frameless ]]
[[file:Peg-S003614_11.jpg |120px|frameless ]]
|-
| 23/8-2013
| 1/4 6" tigre 400 nm pitch pattern CB on oxide carrier 
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50 % in 20*20 mm squares
| Pegasus / jmli
| 10 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes
| S003695
|
|
[[file:S03695-01.jpg |120px|frameless ]]
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[[file:S03695-07.jpg |120px|frameless ]]
|-
| 15/5-2014
| 6" DUV Lithography test pattern
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50 % in 20*20 mm squares
| Pegasus / jmli
| 10 minute TDESC clean + 30 second barc etch
| jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip
| S004031
|
|
[[file:S004031-04.jpg |120px|frameless ]]
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[[file:S004031-edge-06.jpg |120px|frameless ]]
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|-
! colspan="10" | [[Main Page/Process Logs/jmli/Pegasus/SOI/polySOI10-b | Later runs of this recipe]]
|-
|}
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|+ '''Process runs'''

Revision as of 10:51, 2 June 2016

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
6/5-2013 1/4 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50%+ Pegasus / jmli 3min TDESC clean + 30 sec barc etch polySOI5 , 50 cycles or 6:15 minutes S003472

16/7-2013 1/4 6" ELK stitching 11/1-2013 CB on oxide carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50%+ Pegasus/jmli 3 minute TDESC clean + 30 second barc etch jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes S003614 lsh: c4f8 etch -> 20

23/8-2013 1/4 6" tigre 400 nm pitch pattern CB on oxide carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50 % in 20*20 mm squares Pegasus / jmli 10 minute TDESC clean + 30 second barc etch jml/SOI3/polySOI-10: 100 cycles or 12:30 minutes S003695

15/5-2014 6" DUV Lithography test pattern standard stepper mask (50 nm barc + 320 nm krf) Si / 50 % in 20*20 mm squares Pegasus / jmli 10 minute TDESC clean + 30 second barc etch jml/SOI3/polySOI-10: 50 cycles or 6:15 minutes + 2 mins gentle PR strip S004031

Later runs of this recipe




Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
28/8-2014 6" DUVboxA wafer standard stepper mask (50 nm barc + 320 nm krf) Si / 50%+ Pegasus / jmli 30 sec barc etch SOI4\polySOI-10 , 70 cycles or 8:45 minutes S004289

28/8-2014 6" DUVboxB wafer Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) poly / 50%+ Pegasus / jmli 75 sec barc etch SOI4\polySOI-10 , 20 cycles or 2:30 minutes S004289

28/8-2014 6" DUVboxB wafer Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) poly / 50%+ Pegasus / jmli 0 sec barc etch SOI4\polySOI-10 , 30 + 10 cycles or 5:00 minutes S004291 (two processes) S004289 reprocessed, probably overetched -> no spikes

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