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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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! '''Selectivity (resist:SiO2)'''
! '''Selectivity (resist:SiO2)'''
! '''Etch rate in Si'''  
! '''Etch rate in Si'''  
|-
|s006656
|<!-- '''Mask material''' --> 750nm KRF
|<!-- '''Barc etch''' --> none
|<!-- '''Coil power''' --> 1000W
|<!--'''Platen power'''--> 150W
|<!--'''Pressure'''--> 2.5mTorr
|<!--'''Flow rate C4F8'''--> 15sccm
|<!--'''Flow rate H2'''--> 0sccm
|<!--'''Flow rate Ar'''-->30sccm
|<!--'''T'''--> 0
|<!--'''Process time'''--> 10min
|<!--'''Comment'''--> Tried with C4F8/Ar instead of C4F8/H2 => much lower etch rate and bad selectivity to the resist.
|<!--'''Results'''-->
[[File:ICP metal s006656 no1.jpg|100px|frameless]] [[File:ICP metal s006656 no2.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
|<!--'''Profile angles'''-->
|<!--'''Etch depth in SiO2'''-->
358 nm <br>
|<!--'''Etch rate'''-->
35.8 nm/min (2µm pitch)<br>
|<!--'''Etch depth in resist'''-->
526nm
|<!--'''Selectivity (resist:SiO2)'''-->
1:0:68
|<!--'''Etch rate in Si'''-->
|-
|-
|-style="background:white; color:black"
|-style="background:white; color:black"
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|-
|-
|}
|}


==CF4==
==CF4==
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